Contact

Prof. (apl.) Dr. Jürgen Weis
Head of the Nanostructuring Lab
Phone:+49 711 689-1329Fax:+49 711 689-1572

Max Planck Institute for Solid State Research

Heisenbergstraße 1, 70569 Stuttgart

Locally Probing Quantum Hall Samples

Measuring the Hall resistance on a two-dimensional charge carrier system at low magnetic fields allows determining the charge carrier concentration and the type of charge carrier (electron or hole). However at high magnetic field values  (and low temperature),  magnetic field intervals appear where the measured value is constant and well described by |RH|= h/ie2 (h Planck constant, e elementary charge, i={1,2,3 …}), independently of any sample or material properties. In parallel, the longitudinal resistance – measured by the voltage drop along the edge of the two-dimensional charge carrier system – is zero. The effect is nowadays denoted integer quantum Hall effect, discovered in 1980 by Klaus von Klitzing (Noble Prize 1985). The ratio RK=h/e2 is called von-Klitzing constant. With begin of 1990, the effect has been used in metrology as electrical resistance standard representing the exact-defined resistance value RK-90 = 25812.807 Ω.

In literature, various models for the quantum Hall effect exist, assuming even different paths the externally bias current flows through the sample. To develop a microscopic picture for the quantum Hall effect on a solid base, in the middle of the 1990’s we started to build up a scanning force microscope operated at 1.4 Kelvin to look into the Hall potential distribution of quantum Hall samples. In addition, metallic single-electron transistors (SETs) have been deposited on top of two-dimensional electron systems and used as sensitive local electrometers to monitor electrostatic potential variations inside quantum Hall samples at temperatures below 0.1 Kelvin. In 2014 we have established a low-temperature scanning probe microscope in the Precision Lab of the Institute working in a top-loading 3He–4He dilution refrigerator below 50 mK. As probe an array of about eight single-electron transistors (SETs) is used, made in our cleanroom facility, which act as independent electrometers probing quantum Hall samples at a distance of few tens of nanometers with a resolution below 0.1 µm.

 

Publications on Locally Probing Quantum Hall Samples

Single-Electron Transistor Probes Two-Dimensional Electron System in the Quantum Hall Regime

Selected Publications

Single-Electron Transistor Probes Two-Dimensional Electron System in the Quantum Hall Regime [more]
Hall Potential and Current Distribution in Quantum Hall Samples Probed by Scanning Force Microscopy at 1.4 Kelvin

Selected Publications

Hall Potential and Current Distribution in Quantum Hall Samples Probed by Scanning Force Microscopy at 1.4 Kelvin [more]
Quantum Hall Samples: Role of Contacts

Selected Publications

Quantum Hall Samples: Role of Contacts [more]
Array of Single-Electron Transistors on a Tip

Selected Publications

Array of Single-Electron Transistors on a Tip [more]
 
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