Personal tools

→ People → Team Member CVs → Costantini, Giovanni, Dr.
 

Costantini, Giovanni, Dr.

Office: 5 C 24
Phone: 1541

Lab: 4 B 6 / 4 B 2
Phone: 1416 / 1415

Email: g.costantini

Group: Q-Struct & SelfAssembly

Current occupation: Group Leader

Academic Curriculum

04/2000 - today:
Group Leader of the Self-organized Growth and Quantum Structures Group in the Nanoscale Science Department headed by Prof. Klaus Kern at the Max-Planck-Institute für Festkörperforschung in Stuttgart.

1996 - 2000:
Ph.D. in Surface Science, Department of Physics of Genova (summa cum laude).
Advisor: Prof. Ugo Valbusa, working in the STM-Group, with the thesis : "Nanostructuring of metal surfaces by homoepitaxial growth and ion etching".

1995:
Research grant for working in the field of Quantum Computation.

1994:
Laurea in Physics, Department of Physics of Genova (summa cum laude, 110/110 e lode).
Advisor: Prof. Gianni Cassinelli, working in the Research group in Mathematical Methods of Quantum Mechanics and Applied Harmonic Analysis, with the thesis :"Invarianza galieleiana per sistemi quantisitici in interazione".

1989 - 1994:
undergraduate student of Physics at the Department of Physics of the University of Genova.

1989:
Maturità Scientifica, Liceo Scientifico Statale di Luino (summa cum laude, 60/60 e lode).

1986 - 1989:
high school student of the Liceo Scientifico Statale di Luino.

 

Research Topics

 

    My work is focused on the field of experimental nanoscience and is mostly dedicated to the investigation of self-organized processes at surfaces. In particular I have recently concentrated my attention on two main topics: On one side

     

  • Supramolecular self-assembly: I have been studying the self-assembly of organic molecules on metal substrates with a focus on developing functional surfaces with interesting magnetic and catalytic properties. In particular I investigated fabrication strategies based on the two-dimensional analogous of metal-organic coordination chemistry. Furthermore I have been studying the influence of inorganic surfaces onto fundamental molecular processes such as chiral selectivity and molecular recognition. An important aspect of this work has been the search for novel methods to deposit complex functional molecules at surfaces.
  • Self-organized semiconductor nanostructures: I have been investigating the structural and electronic properties of semiconductor nanostructures that spontaneously form in the Ge/Si and the III-V systems. I have been using in-situ and ex-situ scanning probe microscopy techniques as an investigation tool for unraveling the microscopic processes that govern the formation and evolution of semiconductor quantum dots.

 

Publications:

33. Revealing the lateral motion of self-organized islands by selective chemical etching
G.Katsaros, A.Rastelli, M.Stoffel, G.Isella, H.von Känel, A.Bittner, U.Denker, O.G.Schmidt, G.Costantini, and K.Kern, to be published in Surf. Sci. (2006).

32. Shape Transition during Epitaxial Growth of InAs Quantum Dots on GaAs(001): Theory and Experiment
P.Kratzer, Q.K.K.Liu, P.Acosta-Diaz, C.Manzano, G.Costantini, R.Songmuang, A.Rastelli, O.G.Schmidt, and K.Kern, to be published in Phys. Rev. B (2006).

31. Electrospray Ion Beam Deposition of Clusters and Biomolecules
S.Rauschenbach, F.L.Stadler, E.Lunedei, N.Malinowski, S.Koltsov, G.Costantini, and K.Kern, Small 2, 540 (2006).

30. Periodic pillar structures formed by Si etching of multilayer GeSi/Si islands
Z.Zhong, G.Katsaros, M.Stoffel, G.Costantini, K.Kern, O.G.Schmidt, N.Y.Jin-Phillipp, G.Bauer, Appl. Phys. Lett. 87, 263102 (2005).

29. Kinetic origin of island intermixing during the growth of Ge on Si(001)
G.Katsaros, G.Costantini, M.Stoffel, R.Esteban, A.M.Bittner, P.Acosta-Diaz, A.Rastelli, U.Denker, O.G.Schmidt, and K.Kern, Phys. Rev. B 72, 195320 (2005).

28. Engineering atomic and molecular nanostructures at surfaces
J.V.Barth, G.Costantini, and K.Kern, Nature 437, 671 (2005).

27. Templated Growth of Metal-Organic Coordination Chains at Surfaces
T.Classen, G.Fratesi, G.Costantini, S.Fabris, F.L.Stadler, C.Kim, S.de Gironcoli, S.Baroni, and K.Kern, Angew. Chem. Int. Ed. 44, 6142 (2005).

26. Lateral motion of SiGe islands driven by surface-mediated alloying
U.Denker, A.Rastelli, M.Stoffel, J.Tersoff, G.Katsaros, G.Costantini, K.Kern, N.Y.Jin-Phillipp, D.E.Jesson, and O.G.Schmidt, Phys. Rev. Lett. 94, 211603 (2005).

25. Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems
G.Costantini, A.Rastelli, C.Manzano, P.Acosta-Diaz, G.Katsaros, R.Songmuang, O. G. Schmidt, H. v.Känel, and K.Kern, J. Crystal Growth 278, 38 (2005).

24. Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)
F.Montalenti, P.Raiteri, D.B.Migas, H.v.Känel, A.Rastelli, C.Manzano, G.Costantini, U.Denker, O.G.Schmidt, K.Kern, and Leo Miglio, Phys. Rev. Lett. 93, 216102 (2004).

23. Universal shapes of self-organized semiconductor quantum dots: striking similarities between InAs/GaAs(001) and Ge/Si(001)
G.Costantini, A.Rastelli, C.Manzano, R.Songmuang, O.G.Schmidt, H.v.Känel, and K.Kern, Appl. Phys. Lett. 85, 5673 (2004).

22. Hierarchical self-assembly of GaAs/AlGaAs quantum dots
A.Rastelli, S.Stufler, A.Schliwa, R.Songmuang, C.Manzano, G.Costantini, K.Kern, A.Zrenner, D.Bimberg, and O. G. Schmidt, Phys. Rev. Lett. 92, 166104 (2004).

21. Time evolution of the local slope during Cu(110) ion sputtering
C.Boragno, F.Buatier, G.Costantini, A.Molle, D.de Sanctis, U.Valbusa, F.Borgatti, R.Felici, and S.Ferrer, Phys. Rev. B 68, 094102 (2003).

20. InAs/GaAs(001) quantum dots close to thermodynamical equilibrium
G.Costantini, C.Manzano, R.Songmuang, O.G. Schmidt and K. Kern, Appl. Phys. Lett. 82, 3194 (2003).

19. Ion etching of Ag(110) studied by X-ray and STM
C.Boragno, F.Buatier de Mongeot, G.Costantini, U.Valbusa, R. Felici, D.-M.Smilgies, S.Ferrer, Nucl. Inst. Meth. B 193, 590 (2002)

18. Mound shape instability in multilayer Ag(001) homoepitaxy: The role of corner-crossing
F.Buatier de Mongeot, G.Costantini, C.Boragno, U.Valbusa, Europys. Lett. 58, 537 (2002).

17. In situ x-ray scattering study of Ag(110) nanostructuring by ion erosion
C.Boragno, F.Buatier de Mongeot, G.Costantini, U.Valbusa, R. Felici, D.-M.Smilgies, S. Ferrer, Phys. Rev. B 65, 153406 (2002).

16. Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures
M.W.Dashiell, U.Denker, C.Müller, G.Costantini, C.Manzano, K.Kern, and O.G.Schmidt, Appl. Phys. Lett. 80, 1279 (2002).

15. Oxygen interaction with disordered and nanostructured Ag(001) surfaces
L.Vattuone, U. Burghaus, L. Savio, M. Rocca, G.Costantini, F.Buatier de Mongeot, C.Boragno, S.Rusponi and U.Valbusa, J. Chem. Phys. 115, 3346 (2001).

14. Periodic structures induced by normal sputtering on Ag(110) and Ag(001): Flux and Temperature Dependence
G.Costantini, S.Rusponi, F. Buatier de Mongeot, C.Boragno and U.Valbusa, J.Phys-Condens. Matt 13, 5875 (2001)

13. Is ion sputtering always a "negative homoepitaxial deposition"?
G.Costantini, F.Buatier de Mongeot, C.Boragno and U.Valbusa, Phys. Rev. Lett. 86, 838 (2001).

12. Ripple rotation in multilayer homoepitaxy
F.Buatier de Mongeot, G.Costantini, C.Boragno and U.Valbusa, Phys. Rev. Lett. 84,2445 (2000).

11. Temperature dependent reentrant smooth growth in Ag(001) homoepitaxy
G.Costantini, F.Buatier de Mongeot, C.Boragno and U.Valbusa, Surf. Sci. 459,L487 (2000).

10. Electronic structures and growth modes of the early stages of C60 adsorption on the Ag(001)
C.Cepek, L.Giovanelli, M.Sancrotti, G.Costantini, C.Boragno and U.Valbusa, Surf. Sci. 454-456,766 (2000).

9. Tuning surface reactivity by in situ surface nanostructuring
G.Costantini, F.Buatier de Mongeot, S.Rusponi, C.Boragno, U.Valbusa, L.Vattuone, U.Burghaus, L.Savio, M.Rocca, J. Chem. Phys. 112,6840 (2000).

8. Patterning a surface on the nanometric scale by ion sputtering
S.Rusponi, G.Costantini, F.Buatier de Mongeot, C.Boragno and U.Valbusa, Appl. Phys. Lett. 75,3318 (1999).

7. C60 thin films on Ag(001) : an STM study
G.Costantini, S.Rusponi, E.Giudice, C.Boragno and U.Valbusa, Carbon 37,727 (1999).

6. Temperature and Time Evolution of Ripple Structure Induced by Ion Sputtering on Cu(110)
S.Rusponi, G.Costantini, C.Boragno and U.Valbusa, Phys. Low-Dim. Struct. 5, 95 (1999).

5. Ripple wave vector rotation in anisotropic crystal sputtering
S.Rusponi, G.Costantini, C.Boragno and U.Valbusa, Phys. Rev. Lett. 81,2735 (1998).

4. Scaling laws of the ripple morphology on Cu(110)
S.Rusponi, G.Costantini, C.Boragno and U.Valbusa, Phys. Rev. Lett. 81,4184 (1998).

3. Temperature evolution of nanostructures induced by Ar+ sputtering on Ag(001)
G.Costantini, S.Rusponi, R.Gianotti, C.Boragno and U.Valbusa, Surf. Sci. 416, 245 (1998).

2. Ripple morphology on metal surfaces
S.Rusponi, G.Costantini, C.Boragno and U.Valbusa and U.Valbusa, Proceedings of the ECM 80 IUVSTA MEETING, Bratislava, Slovak Republic, (1998).

1. A generalisation of Deutsch's Example
G.Costantini and F.Smeraldi, quant-ph/9702020.