Research: Carbon nanotube field-effect transistors

Field‑effect transistors (FETs) and integrated circuits based on individual single-walled carbon nanotubes have been manufactured on glass substrates.

Each FET has a patterned metal gate electrode, a thin gate dielectric based on a combination of an oxygen-plasma-grown metal oxide and an organic self‑assembled monolayer, a semiconducting single-walled carbon nanotube, and metal source/drain contacts patterned by electron-beam lithography.

The maximum process temperature during device manufacturing is 160 °C which will allow the transistors and circuits to be manufactured not only on glass, as shown here, but also on flexible polymeric substrates.

Molecular Electronics Group (Marco Burghard)

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Unipolar Sequential Circuits Based on Individual-Carbon-Nanotube Transistors and Thin-Film Carbon Resistors H. Ryu, D. Kälblein, O. G. Schmidt, H. Klauk ACS Nano, vol. 5, no. 9, pp. 7525-7531, September 2011

Logic circuits based on individual semiconducting and metallic carbon nanotube devices H. Ryu, D. Kälblein, R. T. Weitz, F. Ante, U. Zschieschang K. Kern, O. G. Schmidt, H. Klauk Nanotechnology, vol. 21, no. 47, pp. 475207/1-5, November 2010

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric R. T. Weitz, U. Zschieschang, A. Forment-Aliaga, D. Kälblein, M. Burghard, K. Kern, H. Klauk Nano Letters, vol. 9, no. 4, pp. 1335-1340, April 2009

High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer R. T. Weitz, U. Zschieschang, F. Effenberger, H. Klauk, M. Burghard, K. Kern Nano Letters, vol. 7, no. 1, pp. 22-27, January 2007

Single-walled carbon nanotube transistors on an ultra-thin gate dielectric R. T. Weitz, U. Zschieschang, H. Klauk, M. Burghard, K. Kern physica status solidi (b), vol. 243, no. 13, pp. 3394-3398, November 2006