Research: Low-voltage, low-power organic circuits
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Organic thin‑film transistors (TFTs) often have relatively thick gate insulators with a capacitance of 100 nF/cm² or less.
As a consequence, 10 V or more are often required to operate the TFTs.
A promising approach to reduce the operating voltage of organic TFTs and circuits is the use of a thin gate dielectric
based on a combination of an oxygen‑plasma‑grown metal oxide and a molecular self‑assembled monolayer.
The total gate dielectric thickness is about 5 to 6 nm, providing a gate capacitance of 0.7 to 1 µF/cm²,
which allows the TFTs to operate with voltages of only a few volts. Using the organic semiconductors pentacene and F16CuPc we have prepared low‑voltage p‑channel and n‑channel organic TFTs on glass and on flexible polymeric substrates. Despite the small dielectric thickness the transistors have very small gate currents of less than 50 pA. We have also designed and manufactured organic complementary circuits, such as inverters, NAND gates, and ring oscillators. These circuits operate with voltages as low as 1.5 V and consume less than 100 pW of power per logic gate. Organic Materials & Devices Group (Marcus Halik) Back to Research |
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