Research: Air-stable n-channel organic TFTs

An important limitation in organic circuit technology is the modest performance and stability of organic n‑channel transistors. To overcome this limitation and prepare low‑power organic circuits with improved dynamic performance we are developing organic semiconductors with better electron mobility and sufficient stability under ambient conditions.

A particularly promising class of high‑electron‑mobility organic semiconductors are core‑cyanated N‑fluorocarbon perylene tetracarboxylic dimide derivatives, initially proposed by the group at Northwestern University (B. A. Jones et al., Angew. Chem. Int. Ed. vol. 43, p. 6363, 2004).

Morphology and electrical characteristics of the vacuum‑deposited organic films depend strongly on the deposition conditions, such as the surface energy of the gate dielectric surface and the substrate temperature during the deposition. The maximum carrier mobility we have measured thus far is 0.3 cm²/Vs.

Molecular Electronics Group (Marko Burghard)
Martin Jansen's Department (Konstantin Amsharov)
Organic Films on Metals Surfaces Group (Ester Barrena)

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Low-voltage organic n channel thin-film transistors based on a core-cyanated perylene tetracarboxylic diimide derivative U. Zschieschang, K. Amsharov, R. T. Weitz, M. Jansen, H. Klauk Synthetic Metals, vol. 159, no. 21-22, pp. 2362-2364, November 2009

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors R. T. Weitz, K. Amsharov, U. Zschieschang, M. Burghard, M. Jansen, M. Kelsch, B. Rhamati, P. A. van Aken, K. Kern, H. Klauk Chemistry of Materials, vol. 21, no. 20, pp. 4949-4954, October 2009

Organic n-Channel Transistors Based on Core-Cyanated Perylene Carboxylic Diimide Derivatives R. T. Weitz, K. Amsharov, U. Zschieschang, E. Barrena Villas, D. K. Goswami, M. Burghard, H. Dosch, M. Jansen, K. Kern, H. Klauk Journal of the American Chemical Society, vol. 130, no. 14, pp. 4637-4645, April 2008