Research: Nanoscale organic thin-film transistors
|
As the channel length of organic thin‑film transistors (TFTs) is reduced below about 10 µm,
the total resistance and the transconductance of the TFTs is more and more limited by the contact resistance,
rather than the channel resistance. In order to analyze the electrical characteristics of organic TFTs with very small channel length and explore ways to alleviate the contact resistance effects in deeply scaled organic TFTs, we have developed a method to manufacture p‑channel and n‑channel organic TFTs with lithographically patterned metal gate electrodes, a thin gate dielectric based on an oxygen-plasma-grown metal oxide and a molecular self‑assembled monolayer (SAM), and top source/drain contacts patterned by electron‑beam lithography with a channel length down to about 100 nm. Although the effect of the contact resistance is visible in the output characteristics, the TFTs display pronounced drain current saturation, large on/off current ratio, and steep subthreshold swing (150 mV/decade). This shows that aggressively scaled organic TFTs with the potential for Megahertz operation at low voltages can have excellent static electrical characteristics. Back to Research. |
 |
|
|
