Monolithically integrated circuits from functional oxides
C. Richter, C. Woltmann, G. Pfanzelt, B. Foerg, M. Rommel, T. Reindl, U. Waizmann, J. Weis, H. Boschker, and J. Mannhart
The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here we report on monolithically integrated NMOS logic circuits that utilize a two-dimensional electron liquid generated at an oxide interface as channel material. These results illustrate the practicability and the potential of oxide electronics.