Megahertz operation of flexible organic transistors

Autoren
U. Zschieschang, U. Kraft, R. Rödel, M. Sejfić, R. Hofmockel, M. Aghamohammadi, S. Bisoyi, and H. Klauk
Abteilungen
A process for the fabrication of organic transistors with channel lengths as short as 1µm on plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that allows the TFTs to operate with voltages of 3V. The p-channel TFTs have a field-effect mobility of about 1cm2/Vs, an on/off ratio of 107, and a signal propagation delay of 300ns per stage. For the n-channel TFTs, a field-effect mobility of 0.06cm2/Vs, an on/off ratio of 106, and a signal propagation delay of 17µs per stage have been obtained.

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