A plasmon emitting transistor based on a single molecule

Autoren
Ch. Große, A. Kabakchiev, Th. Lutz, R. Froidevaux, M. Etzkorn, U. Schlickum, K. Kuhnke, and K. Kern
Abteilungen
The generation of plasmonic light in a tunnel junction between two metal electrodes can be gated by an individual molecule located inside the junction. This is achieved by making use of the ability to induce charging and discharging of the molecule by an electric gate field. Thus a precise control of plasmon generation on a nanosecond time scale becomes feasible. The concept is applicable as a plasmon-emitting transistor with a size of little more than one nanometer.

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