The quantum Hall effect was discovered in 1980 by Klaus von Klitzing at the Max Planck Institute for Solid State Research. It occurs when electrons move through extremely thin semiconductor layers at very low temperatures and under strong magnetic fields. Under these conditions, an astonishing phenomenon emerges: electrical resistance does not change continuously, but in precise, quantized steps—always a multiple of a fundamental constant. This quantization is so exact that it now serves as the basis for defining the electrical unit ohm. The discovery was not only a breakthrough in fundamental physics but also revolutionized precision measurement—earning the Nobel Prize in Physics in 1985.
Our team at the Max Planck Institute for Solid State Research, in collaboration with the European Synchrotron Radiation Facility (ESRF) and the Karlsruhe Institute of Technology, has uncovered a…
Scanning tunneling microscopy visualizes signatures of p-orbital texture in the charge-density-wave state of the topological semimetal candidate CeSbTe
Spin Hall nano-oscillators convert DC to magnetic auto-oscillations in the microwave regime. Current research on these and similar devices is dedicated to creating next-generation energy-efficient…
Hydrogen is the most abundant element in the universe. This makes it attractive for use in sustainable technologies, such as energy storage and fuel cells, but also in novel electronic components. In…
The world's first center for solar batteries and optoionic technologies is being established in Bavaria. The Technical University of Munich (TUM) and the Max Planck Society (MPG) have set the course…
In search of exotic quantum magnetism on a frustrated pyrochlore lattice, scientists from the Max Planck Institute discovered an unexpected valence bond state arising from unique quenching of bond…