Research report (imported) 2015 - Max Planck Institute for Solid State Research
The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, transistors with voltage gain have not yet been realized from complex oxides. Here we report on the fabrication of such transistors and on monolithically integrated NMOS logic circuits that utilize a two-dimensional electron liquid generated at an oxide interface as channel material. These results illustrate the practicability and the potential of oxide electronics.