The Scientific Facility "Interface Analysis" (Grenzflächen Analytik, GA) (headed by Prof. Dr. Ulrich Starke) provides service (and facilities) to quantify the chemical composition and to determine the electronic structure and the atomic geometry of solid-solid and gas-solid interfaces.
Research in the Interface Analysis group is directed towards the atomic and electronic structure of surfaces and thin films of technologically interesting materials like graphene and transition metal dichalcogenides (TMDs). The goal of these research activities is a fundamental understanding of growth, interface and crystal formation and elecronic structure at the atomic scale. A major research project at present is the growth and manipulation of electronic properties of epitaxial graphene on SiC.
11/12/2020: One-dimensional graphene nanoribbons published in Nature Communications.:
This work was highlighted by MAX IV.
19/10/2020: Overdoping of graphene beyond the van Hove singularity published in Phys. Rev. Lett.
This work is highlighted in
Physics Today by H. M. Hill Graphene is doped to an exotic regime
and by M. M. Scherer Graphene Doping Reaches New Levels in Physics 13, 161 (2020)
16/09/2020: Hydrogen-intercalated graphene on SiC as platform for hybrid superconductor devices published in Adv. Quantum Technol.:
16/09/2020: Magnsesium-sulfur batteris with fluorinated electrolyte published in Electrochimica Acta:
02/09/2020: First paper with data measured with our new NanoESCA published in ACS Appl. Mater. Interfaces:
25/08/2020: LaNi1-xCuxO3-δ perovskites as reversible solid oxide cells publisched in Int. J. Hydrog. Energy:
06/07/202: Magnesium-sulfur battereis with borohydride electrolyte published in Batteries & Supercaps:
04/06/2020: Press release on gold and silver intercalation of graphene:
20/05/2020 Silver intercalation in graphene published in Phys. Rev. B:
11/05/2020 Composition of solid electrolyte interface published in Small:
06/05/2020 Gold intercalation in graphene published in Nature Communications:
06/04/2020 Transition metal dichalcogenide growth on graphene published in Phys. Rev. B:
- TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry)
- High resolution PES (Photoelectron Spectroscopy)
- NanoESCA (Electron Spectroscopy for Chemical Analysis)
- AFM (Atomic Force Microscopy)
- Quantitative LEED (Low-Energy Electron Diffraction)
These techniques are supplemented by:
- Optical Profiler.
- Scanning tunneling microscopy (STM) and spectroscopy (STS) in collaboration with University of Konstanz and 4-probe STM in collaboration with University of Chemnitz.
- Synchrotron expertise: angle-resolved photoelectron spectroscopy (ARPES), x-ray photoelectron spectroscopy (XPS), photoemission electron microscopy (PEEM), low-energy electron microscopy (LEEM), x-ray magnetic circular dichroism (XMCD), near edge x-ray absorption fine structure (NEXAFS), high energy grazing incidence x-ray diffraction (GXRD).
- Epitaxial graphene on SiC
- Intercalation and doping of epitaxial graphene on SiC
- Structured epitaxial graphene
- 2D materials
- Molecular layers on surfaces