Shaping tungsten dichalcogenides properties by chemical vapor deposition of alloys and polytypes

  • Date: Jul 24, 2025
  • Time: 02:00 PM - 03:00 PM (Local Time Germany)
  • Speaker: Gaia Di Berardino
  • Université Paris-Saclay & CNRS, Palaiseau, France
  • Location: Max Planck Institute for Solid State Research
  • Room: 7D2
Shaping tungsten dichalcogenides properties by chemical vapor deposition of alloys and polytypes

Two-dimensional (2D) transition metal dichalcogenides (TMDs) present varied optical and electronic properties, each associated to a different crystal structure. We optimize the chemical vapor deposition (CVD) of tungsten-based TMDs, such as hexagonal (1H) WSe2 and WS2 monolayers, as well as monoclinic (1T’) WTe2. While 1H WSe2 and WS2 are typically direct band-gap semiconductors in the monolayer form [1], the anisotropic 1T' WTe2 is a small band gap topological insulator. Our purpose is to study the structural and electronic phase transition of the ternary alloy WSe2xTe22(1-x) between the 1H and 1T' crystal structures. We further optimize our CVD growth methods to maximize the yield of bilayer (2ML) hexagonal WSe2 and WS2, for which the available polytype combinations and the relative physical properties are even richer [2]. In addition

to Raman and photoluminescence spectroscopies, we employ various other experimental techniques, including second harmonic generation and selective area electron diffraction, to discern between the 2ML polytypes.

[1] Mahmoudi A. et al., Phys. Rev. B 108, 045417 (2023).

[2] Di Berardino G. et al., Phys. Rev. B 111, 125403 (2025).

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