This project aims to establish functional electronic devices based on oxide materials, capable of neuromorphic computing. Oxide materials have shown interesting memory switch properties and carry the potential to be used in ReRAM/memristor for neuromorphic computers, which hold the promise of several orders of magnitude more power efficiency versus current von Neumann computer. One example of such analog resistive switching devices has been achieved in SrCoOx /SrTiO3 by ionic liquid gating, reported by Prof. Stuart Parkin’s group (MPI Halle) [1].

Within the MPI-UBC collaboration, the program will encompass both material/devide development and fundamental studies to understand the underlying physics of operations using experimentation techniques. At the Stewart Blusson Quantum Matter Institute of UBC, Prof. George Sawatzky will provide theoretical input and simulation of operations [2]. New materials and devices will be fabricated and explored in Prof. Ke Zou’s group using molecular beam epitaxy (MBE). Close collaboration will be formed with Professor Stuart Parkin’s group at MPI Halle and Professor Liu Hao Tjeng’s group at MPI Dresden, to achieve a complete understanding of the fundamental mechanisms and the device physics related to the crystal structures, defects, and domains. 


[1] B. Cui, P. Werner, T. Ma, X. Zhong, Z. Wang, J. M. Taylor, Y. Zhuang and S. S. P. Parkin, Nature Communications 9, 3055 (2018).

[2] I. S. Elfimov, A. Rusydi, S. I. Csiszar, Z. Hu, H. H. Hsieh, H.-J. Lin, C. T. Chen, R. Liang, and G. A. Sawatzky, Phys. Rev. Lett. 98, 137202 (2007).

Principal Investigators

Zou (UBC) kzou [at]

Sawatzky (UBC) sawatzky [at]

Parkin (MPI-Halle) stuart.parkin [at]

Tjieng (MPI-Dresden) Hao.Tjeng [at]


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