Quantum Materials & Devices

The possibility to design materials at the atomic and molecular level has enabled the observation, control and device implementation of novel quantum phenomena. We search for novel quantum materials and explore their fabrication on demand by combining one- and two-dimensional structures and/or the tailoring of interfacial properties. We address the electronic and optoelectronic properties by spectroscopic and electrical transport measurements and novel imaging techniques.  Of particular interest is the manipulation of spin phenomena without the use of magnetic fields and the interplay and coexistence of topologically trivial as well as non-trivial states.

Responsible Scientists

Dr. Christian Ast

Dr. Marko Burghard 

Team Members

Dr. Soudabeh Mashhadi, Katharina Polyudov, Alessio Scavuzzo, Andreas Topp

Key Publications

Soudabeh Mashhadi, Daniel Weber, Leslie Schoop, Armin Schulz, Bettina Lotsch, Marko Burghard, and Klaus Kern
Electrical transport signature of the onset of Kitaev interactions in α-Rucl3 nanoflakes
Nano Lett. 18, 3203 (2018)

Leslie M. Schoop, Andreas Topp, Judith Lippmann, Fabio Orlandi, Lukas Müchler, Maia G. Vergniory,
Yan Sun, Andreas W. Rost, Viola Duppel, Maxim Krivenkov, Shweta Sheoran, Pascal Manuel,
Andrei Varykhalov, Binghai Yan, Reinhard K. Kremer, Christian R. Ast, and Bettina V. Lotsch
Tunable Weyl and Dirac states in the nonsymmorphic compound CeSbTe
Sci. Adv. 4, eaar2317 (2018)

P. Seifert, K. Vaklinova, S. Ganichev, K. Kern, M. Burghard, and A.W. Holleitner
Spin Hall photoconductance in a three-dimensional topological insulator at room temperature
Nature Commun. 9, 331 (2018)

Andreas Topp, Raquel Queiroz, Andreas Grüneis, Lukas Müchler, Andreas W. Rost, Andrei Varykhalov, Dmitry Marchenko, Maxim Krivenkov, Fanny Rodolakis, Jessica L. McChesney, Bettina V. Lotsch, Leslie M. Schoop, and Christian R. Ast
Surface Floating 2D Bands in Layered Nonsymmorphic Semimetals: ZrSiS and Related Compounds
Phys. Rev. X 7, 04107

Soudabeh S. Mashhadi, Dinh Loc Duong, Marko Burghard, and Klaus Kern
Efficient photo-thermoelectric conversion in lateral topological insulator heterojunctions
Nano Lett. 7, 214 (2017)

Roberto Urcuyo, Dinh Loc Duong, Patrick Sailer, Marko Burghard, and Klaus Kern
Hot carrier extraction from multilayer graphene
Nano Lett. 16, 6761 (2016)

Kristina Vaklinova, Alexander Hoyer, Marko Burghard and Klaus Kern
Current-Induced Spin Polarization in Topological Insulatr-Graphene Heterostructures
Nano Lett. 16, 2595 (2016)

Leslie M. Schoop, Mazhar N. Ali, Carola Straßer, Viola Duppel, Stuart S.P. Parkin, Bettina V. Lotsch, and Christian R. Ast
Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS
Nature Communications 7, 11696 (2016)
(also: arXiv:1509.00861)

Christian Cervetti, Angelo Rettori, Maria Gloria Pini, Andrea Cornia, Aña Repollés, Fernando Luis, Martin Dressel, Stephan Rauschenbach, Klaus Kern, Marko Burghard, and Lapo Bogani
The classical and quantum dynamics of molecular spins on graphene
Nature Materials 15, 164 (2016)

B.M. Ludbrook, G. Levy, M. Zonno, M. Schneider, D.J. Dvorak, C.N. Veenstra, S. Zhdanovich, D. Wong, P. Dosanjh, C. Straßer, A. Stöhr, S. Forti, C.R. Ast, U. Starke, and A. Damascelli
Evidence for superconductivity in Li-decorated monolayer graphene
PNAS 112, 11795 (2015)

E. C. Peters, A. J. M. Giesbers, M. Burghard, and K. Kern
Scaling in the quantum Hall regime of graphene Corbino devices
Appl. Phys. Lett. 104, 203109 (2014)

P. Gehring, H .M. Benia, Y. Weng, R. Dinnebier, C. R. Ast, M. Burghard, and K. Kern
A natural topological insulator
Nano Lett. 13, 1179 (2013)

P. Gehring, B. F. Gao, M. Burghard, and K. Kern
Growth of high-mobility Bi2Te2Se nanoplatelets on BN sheets by van der Waals epitaxy
Nano Lett. 12, 5137 (2012)

H. M. Benia, C. Lin, K. Kern, and C. R. Ast
Reactive chemical doping of the Bi2Se3 topological insulator
Phys. Rev. Lett. 107, 177602 (2011)

R. S. Sundaram, M. Steiner, H.-Y. Chiu, M. Engel, A. A. Bol, R. Krupke, M. Burghard, K. Kern, and P. Avouris
Weak electronic coupling at the graphene-gold interface
Nano Letters 11, 3833 (2011)

M. Burghard, H. Klauk, and K. Kern,
Carbon-based field effect transistors for nanoelectronics
Adv. Mater. 21, 2586 (2009)

I. Gierz, C. Riedl, U. Starke, C. R. Ast, and K. Kern
Atomic hole doping of graphene
Nano Letters 8, 4603 (2008)

E. J. H. Lee, K. Balasubramanian, R. T. Weitz, M. Burghard, and K. Kern,
Contact and edge effects in graphene devices
Nature Nanotechnology 3, 486 (2008)

C. Gómez-Navarro, R. T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, and K. Kern,
Electronic transport properties of individual chemically reduced graphene oxide sheets
Nano Letters 7, 3499 (2007)

C. R. Ast, J. Henk, A. Ernst, L. Moreschini, M. C. Falub, D. Pacilé, P. Bruno, K. Kern, and M. Grioni
Giant spin splitting through surface alloying
Phys. Rev. Lett. 98, 186807 (2007)

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