[14] J.H. Smet, D. Weiss, K. von Klitzing, R. Fleischmann, R. Ketzmerick, T.Geisel, W. Wegscheider, P.T. Coleridge, Z.W. Wasilewski, G. Weimann,
“Enhanced soft-wall effects for composite fermions in magnetic focusing and commensurability experiments”,
Physica E 1, 153 (1997).

[13] J.H. Smet, D. Weiss, K. von Klitzing, P.T. Coleridge, Z.W. Wasilewski, R.Bergmann, H. Schweizer, A. Scherer,
“Composite fermions in periodic and random antidot lattices”,
Phys. Rev. B 56, 3598 (1997).

[12] J.H. Smet, R. Fleischmann, D. Weiss, R. Ketzmerick, R.H. Blick, G. Lütjering, K. von Klitzing, T. Geisel, G. Weimann,
“Evidence for quasi-classical transport of composite fermions in an inhomogeneous magnetic field”,
Semicond. Sci. Techn. 11, 1482-1487 (1996).

[11] J.H. Smet, D. Weiss, R.H. Blick, G. Lütjering, K. von Klitzing, R. Fleischmann, R. Ketzmerick, T. Geisel, G.Weimann,
“Magnetic focusing of composite fermions through arrays of cavities”,
Phys. Rev. Lett. 77, 2272 (1996).

[10] J.H. Smet, C.G. Fonstad, Q. Hu,
“Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources”,
J. of Appl. Phys. 79, 9305 (1996).

[9] Y. Hirayama, J.H. Smet, L.H. Peng, C.G. Fonstad, E.P. Ippen,
“Feasibility of 1.55 μm intersubband photonic devices using InGaAs/AlAs pseudomorphic quantum well structures”,
Jap. J. of Appl. Phys. 33, 890 (1994).

[8] J.H. Smet, L.H. Peng, Y. Hirayama, C.G. Fonstad,
“Electronic intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells”,
Appl. Phys. Lett. 64, 986 (1994).

[7] Y. Hirayama, J.H. Smet, L.H. Peng, C.G. Fonstad, E.P. Ippen,
“Observation of 1.8 μm intersubband transition in InGaAs/AlAs pseudomorphic quantum well heterostructures”,
Appl. Phys. Lett. 63, 1663 (1993).

[6] J.H. Smet, C.G. Fonstad, Q. Hu,
“Magnetotunneling spectroscopy in wide In0.53Ga0.47As/In0.52Al0.48As double quantum wells”,
Appl. Phys. Lett. 63, 2225 (1993).

[5] L.H. Peng, J.H. Smet, T.P.E. Broekaert, C.G. Fonstad,
“Strain effects in the intersubband transitions of narrow InGaAs quantum wells”,
Appl. Phys. Lett. 62, 2413 (1993).

[4] L.H. Peng, J.H. Smet, T.P.E. Broekaert, C.G. Fonstad,
“Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells”,
Appl. Phys. Lett. 61, 2078 (1992).

[3] L.H. Peng, T.P.E. Broekaert, W.Y. Choi, B.R. Bennett, J.H. Smet, V. Diadiuk, S.H. Groves, S.C. Palmateer, N. Pan, C.G. Fonstad,
“Mapping of the localized interface and surface states in InGaAs lattice matched to Fe-doped InP by infrared spectroscopy”,
J. of Appl. Phys. 72, 3664 (1992).

[2] J.H. Smet, T.P.E. Broekaert, C.G. Fonstad,
“Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunnelling diodes”,
J. of Appl. Phys. 71, 2475 (1992).

[1] J. Genoe, C. Van Hoof, W. Van Roy, J.H. Smet, K. Fobelets, R.P. Mertens, G. Borghs,
“Capacitances in double-barrier tunnelling structures”,
IEEE Trans. on Electron Devices 38, 2006 (1991).