Two-Dimensional Electron Systems

 

Photograph of a 10 x 10 mm2 sized sample patterned by electron-beam lithography. It comprises several hundred FETs and further test devices. The gate lengths as designed vary from 50 nm to 5 µm.
Link to research article "
Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO3-SrTiO3-Based Heterostructures"
C. Woltmann, T. Harada, H. Boschker, V. Srot, P.A. van Aken, H. Klauk, and J. Mannhart
Photograph of a LaAlO3–SrTiO3 chip carrying arrays with more than 700.000 FETs with channel lengths as small as ~ 350 nm. The colors are interference colors arising from the transistor patterns.
Link to research article "First Integrated Circuits Built from Functional Oxides"
C. Woltmann, G. Pfanzelt, J. Weis, H. Boschker , and J. Mannhart
 Device layout Photograph of a typical Au–LaAlO3–SrTiO3 tunnel device. The broad golden ring lies on top of the LaAlO3 layer, which serves as a tunnel-barrier between the 2DEL and the Au. The outer ring and the center contact of the device are Au-covered Ti contacts to the 2DEL.
Link to research article "Tunnel Spectroscopy of  Superconducting Oxide Interfaces"
E. Fillis-Tsirakis, H. Boschker, L. Kürten, C. Richter, W. Dietsche, and J. Mannhart
Optical microscopy image of a brilliant-cut diamond such as the ones used in a diamond anvil cell. 
Link to research article "Hydrostatic Pressure Response of an Oxide Two-dimensional Electron System"
J. Zabaleta, V. S. Borisov, R. Wanke, H. O. Jeschke, S. C. Parks, B. Baum, A. Teker, T. Harada, K. Syassen, T. Kopp, N. Pavlenko, R. Valentí, and J. Mannhart
Go to Editor View