We have investigated the static and dynamic performance, the operational stability, and the process variations of field-effect transistors based on individual semiconducting single-walled carbon nanotubes (SWCNTs) fabricated on glass and on flexible plastic substrates.

The individual-carbon-nanotube transistors have on/off current ratios of about 105, a transconductance up to 6 µS, and switching delay time constants of less than 100 nsec.

By integrating individual-carbon-nanotube transistors with thin-film carbon resistors that serve either as load resistors or as level-shift resistors, we have also demonstrated combinational circuits, such as NAND gates and NOR gates, as well as a sequential circuit in the form of a NAND latch.

Unipolar Sequential Circuits Based on Individual-Carbon-Nanotube Transistors and Thin-Film Carbon Resistors
H. Ryu, D. Kälblein, O. G. Schmidt, H. Klauk
ACS Nano, vol. 5, no. 9, pp. 7525-7531, September 2011

Logic circuits based on individual semiconducting and metallic carbon nanotube devices
H. Ryu, D. Kälblein, R. T. Weitz, F. Ante, U. Zschieschang, K. Kern, O. G. Schmidt, H. Klauk
Nanotechnology, vol. 21, no. 47, pp. 475207/1-5, November 2010

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric
R. T. Weitz, U. Zschieschang, A. Forment-Aliaga, D. Kälblein, M. Burghard, K. Kern, H. Klauk
Nano Letters, vol. 9, no. 4, pp. 1335-1340, April 2009

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