Electron Beam Lithography


STEM image of gold structure defined by Electron Beam Lithography on thin silicon nitride membrane. © MPI-FKF / M. Rommel

Within the Nanostructuring Lab, various substrates – conventional and unconventional – have to be structured by high resolution electron-beam lithography. The density and area size of the written pattern varies from application to application. Diverse resists have to be used, acting either as etching or lift-off mask. Facing a large variety of combinations, we have to challenge electron beam lithography.


Simple efficient coordinate markers for investigating synthetic nanofibers
G.-T. Kim, U. Waizmann, S. Roth
Applied Physics Letters 79, 3497 (2001)

Simple method to prepare individual suspended nanofibers
G.-T. Kim, G. Gu, U. Waizmann, S. Roth
Applied Physics Letters 80, 1815 (2002)

Benchmark test of Monte-Carlo simulation for high resolution electron beam lithography
M. Rommel, K.E. Hoffmann, T. Reindl, J. Weis, N. Unal, U. Hofmann
Microelectronic Engineering 98, 201 (2012)

Sub-10 nm resolution after lift-off using HSQ/PMMA double layer resist
M. Rommel, B. Nilsson, P. Jedrasik, V. Bonanni, A. Dmitriev, J. Weis
Microelectronic Engineering 110, 123 (2013)

Hydrogen silsesquioxane bilayer resists—Combining high resolution electron beam lithography and gentle resist removal
M. Rommel, J. Weis
Journal of Vacuum Science & Technology B 31, 06F102 (2013)


High Resolution Electron Beam Lithography – An improved understanding of a versatile lithography technique
Marcus Rommel, Dissertation, Universität Stuttgart (2018)

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